A4 Article in conference proceedings
Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study (2021)


Matana Luza, L., Söderström, D., Pio de Mattos, A. M., Bezerra, E. A., Cazzaniga, C., Kastriotou, M., Poivey, C., & Dilillo, L. (2021). Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study. In DTIS 2021 : Proceedings of the 16th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era. IEEE. https://doi.org/10.1109/DTIS53253.2021.9505143


JYU authors or editors


Publication details

All authors or editors: Matana Luza, Lucas; Söderström, Daniel; Pio de Mattos, Andre Martins; Bezerra, Eduardo Augusto; Cazzaniga, Carlo; Kastriotou, Maria; Poivey, Christian; Dilillo, Luigi

Parent publication: DTIS 2021 : Proceedings of the 16th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era

Conference:

  • IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era

Place and date of conference: Montpellier, France , 28.-30.6.2021

ISBN: 978-1-6654-3655-7

eISBN: 978-1-6654-3654-0

Publication year: 2021

Publication date: 28/06/2021

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/DTIS53253.2021.9505143

Publication open access: Not open

Publication channel open access:

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/78438


Abstract

This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an atmospheric-like neutron spectrum at the ChipIr beamline in the Rutherford Appleton Laboratories, UK. The memories were tested with a reduced refresh rate to expose more single-event upsets and under similar conditions provided by a board specifically developed for this type of study in test facilities. The board has also been designed to be used as a nanosatellite payload in order to perform similar tests. The neutron-induced failures were studied and characterized, presenting the occurrence of single-bit upsets and stuck bits. The cross sections for each type of event and technology node show that the 110 nm model is more sensitive to neutron-induced single-event effects than the other models.


Keywords: radiation physics; space technology; memories (computing); random access memories; neutrons

Free keywords: Radiation Effects; SDRAM; SEE; Stuck Bits


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Ministry reporting: Yes

Reporting Year: 2021

JUFO rating: 1


Last updated on 2022-20-09 at 13:52