JYFL-ACCLAB-RADEF_2024-03 Temperature dependence of heavy ion radiation sensitivity of 2nd gen SiC power MOSFETs


Niskanen, Kimmo; Javanainen, Arto; Kettunen, Heikki; Witulski, Arthur; Martinella, Corinna; Sengupta, Arijit; Harris, Phoenix. (2024). JYFL-ACCLAB-RADEF_2024-03 Temperature dependence of heavy ion radiation sensitivity of 2nd gen SiC power MOSFETs. V. 20.4.2024. University of Jyväskylä. https://doi.org/10.23729/796d4a80-9d3d-4225-a9c3-e98ea600f168.


JYU authors: 
  • Contact person (yes/no): Yes
  • Contact person (yes/no): Yes
  • Contact person (yes/no): No

All authors: Niskanen, Kimmo; Javanainen, Arto; Kettunen, Heikki; Witulski, Arthur; Martinella, Corinna; Sengupta, Arijit; Harris, Phoenix

Contact information: jyfl-acclab-data@jyu.fi

Funders: European Commission; Department of Physics; European Space Research and Technology Centre

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Contributors: 


Availability and identifiers

Availability: Direct download (Embargo date: 31/12/2024)

Publication year: 2024

DOI identifier in original repository: https://doi.org/10.23729/796d4a80-9d3d-4225-a9c3-e98ea600f168


Description of the dataset

Description: This dataset contains data of Xe-126 irradiation tests of 2nd gen. SiC MOSFETs (CPM2-1200-0080B) at different temperatures. Temperature dependence of leakage current degradation was observed.

Language: English

Free keywords: silicon carbide
heavy ion irradiation

Keywords (YSO): ionising radiation; power electronics

Fields of science: 114 Physical sciences; 213 Electrical engineering, Electronic and Information engineering

Follow-up groups: Accelerator Laboratory (Department of Physics PHYS, JYFL) JYFL-ACCLAB; Accelerator and Subatomic Physics (University of Jyväskylä JYU)

Do you deal with data concerning special categories of personal data in your research?: No


Projects related to dataset


Last updated on 2024-30-10 at 18:48