electronic components
http://www.yso.fi/onto/yso/p9652
Related publications
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- Heavy-ion induced single event effects and latent damages in SiC power MOSFETs (2022) Martinella, C.; et al.; A1; OA
- Neutron-induced effects on a self-refresh DRAM (2022) Matana, Luza Lucas; et al.; A1
- 0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments (2021) Cecchetto, Matteo; et al.; A1; OA
- Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment (2021) Söderström, Daniel; et al.; A1; OA
- Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies (2021) Martinella, Corinna; et al.; A1; OA
- Improved stability of black silicon detectors using aluminum oxide surface passivation (2021) Heinonen, Juha; et al.; A4; OA; 978-1-5106-4549-3
- Single-event radiation effects in silicon carbide power MOSFETs (2021) Martinella, Corinna; G5; OA; 978-951-39-8726-8
- The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance (2021) Coronetti, Andrea; et al.; A1; OA
- Thermal-to-high-energy neutron SEU characterization of commercial SRAMs (2021) Coronetti, Andrea; et al.; A4; 978-1-6654-4205-3
- Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM (2020) Luza, Lucas Matana; et al.; B3; 978-1-7281-5426-8
