electronic components
http://www.yso.fi/onto/yso/p9652
Related publications and other outputs
1 of 3
- Heavy-ion induced single event effects and latent damages in SiC power MOSFETs (2022) Martinella, C.; et al.; A1; OA
- Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation (2022) Roed, Ketil; et al.; A1; OA
- Neutron-induced effects on a self-refresh DRAM (2022) Matana, Luza Lucas; et al.; A1; OA
- 0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments (2021) Cecchetto, Matteo; et al.; A1; OA
- Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment (2021) Söderström, Daniel; et al.; A1; OA
- Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies (2021) Martinella, Corinna; et al.; A1; OA
- Improved stability of black silicon detectors using aluminum oxide surface passivation (2021) Heinonen, Juha; et al.; A4; OA; 978-1-5106-4549-3
- Pulsed Electron Beam induced SEU Effects in a SRAM memory (2021) Wyrwoll, Vanessa; et al.; A4; 978-1-6654-3794-3
- Single-event radiation effects in silicon carbide power MOSFETs (2021) Martinella, Corinna; G5; OA; 978-951-39-8726-8
- The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance (2021) Coronetti, Andrea; et al.; A1; OA
