random access memories
http://www.yso.fi/onto/yso/p15250
Related publications and other outputs
1 of 2
- Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling (2023) Lüdeke, Sascha; et al.; A1; OA
- Neutron-induced effects on a self-refresh DRAM (2022) Matana, Luza Lucas; et al.; A1; OA
- 0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments (2021) Cecchetto, Matteo; et al.; A1; OA
- Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications (2021) Coronetti, Andrea; et al.; A1; OA
- Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment (2021) Söderström, Daniel; et al.; A1; OA
- Pulsed Electron Beam induced SEU Effects in a SRAM memory (2021) Wyrwoll, Vanessa; et al.; A4; 978-1-6654-3794-3
- Study of SEU sensitivity of SRAM-Based Radiation Monitors in 65 nm CMOS (2021) Wang, J.; et al.; A1; OA
- Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study (2021) Matana Luza, Lucas; et al.; A4; OA; 978-1-6654-3654-0
- Thermal-to-high-energy neutron SEU characterization of commercial SRAMs (2021) Coronetti, Andrea; et al.; A4; 978-1-6654-4205-3
- Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM (2020) Luza, Lucas Matana; et al.; B3; 978-1-7281-5426-8
