transistors
http://www.yso.fi/onto/yso/p16104
Related publications
1 of 2
- Heavy-ion induced single event effects and latent damages in SiC power MOSFETs (2022) Martinella, C.; et al.; A1; OA
- Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors (2022) Yang, Jun; et al.; A1; OA
- Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies (2021) Martinella, Corinna; et al.; A1; OA
- Single-event radiation effects in silicon carbide power MOSFETs (2021) Martinella, Corinna; G5; OA; 978-951-39-8726-8
- New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs (2020) Witulski, Arthur F.; et al.; A4; 978-3-0357-1579-8
- Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs (2019) Martinella, Corinna; et al.; A1; OA
- Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments (2019) Johnson, Robert A.; et al.; A1; OA
- Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs (2019) Ball, D. R.; et al.; A1; OA
- Failure Estimates for SiC Power MOSFETs in Space Electronics (2018) Galloway, Kenneth F.; et al.; A1; OA
- Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment (2018) Johnson, Robert A.; et al.; A4; 978-1-7281-0216-0
