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    transistors


    http://www.yso.fi/onto/yso/p16104


    Related publications

    • New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs (2020) Witulski, Arthur F.; et al.; A4; 978-3-0357-1579-8
    • Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs (2019) Martinella, Corinna; et al.; A1; OA
    • Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments (2019) Johnson, Robert A.; et al.; A1; OA
    • Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs (2019) Ball, D. R.; et al.; A1; OA
    • Failure Estimates for SiC Power MOSFETs in Space Electronics (2018) Galloway, Kenneth F.; et al.; A1; OA
    • Single-Event Burnout Mechanisms in SiC Power MOSFETs (2018) Witulski, Arthur F.; et al.; A1; OA
    • Nanodevices by DNA based gold nanostructures (2017) Tapio, Kosti; G5; OA
    • Nanoporous kaolin – cellulose nanofibril composites for printed electronics (2017) Torvinen, Katariina; et al.; A1; OA
    • Optical properties of conductive carbon-based nanomaterials (2016) Isoniemi, Tommi; G5; OA

    Last updated on 2019-09-04 at 12:45

       
     


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