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    semiconductors


    http://www.yso.fi/onto/yso/p18256


    Related publications

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    • Heavy-ion induced single event effects and latent damages in SiC power MOSFETs (2022) Martinella, C.; et al.; A1; OA
    • Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies (2021) Martinella, Corinna; et al.; A1; OA
    • Improved stability of black silicon detectors using aluminum oxide surface passivation (2021) Heinonen, Juha; et al.; A4; OA; 978-1-5106-4549-3
    • Single-event radiation effects in silicon carbide power MOSFETs (2021) Martinella, Corinna; G5; OA; 978-951-39-8726-8
    • Sub-level engineering strategy of nitrogen-induced Bi2O3/g-C3N4 : a versatile photocatalyst for oxidation and reduction (2021) Khazaee, Zeynab; et al.; A1
    • Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes (2021) Krevchik, V.D.; et al.; A1; OA
    • Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs (2020) Martinella, C.; et al.; A1; OA
    • Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes (2020) Ball, D.R.; et al.; A1; OA
    • Polymorphic chiral squaraine crystallites in textured thin films (2020) Zablocki, Jennifer; et al.; A1; OA
    • Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation (2020) Heinonen, J; et al.; A1

    Last updated on 2019-09-04 at 12:46

       
     


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