Estimation of proton induced Single Event Effect rates in very deep submicron technologies (LEPSEE)
Päärahoittaja
Rahoittajan antama koodi/diaarinumero: 4000130439/20/NL/KML
Päärahoittajan myöntämä tuki (€)
- 140 000,00
Rahoitusohjelma
Hankkeen aikataulu
Hankkeen aloituspäivämäärä: 01.04.2020
Hankkeen päättymispäivämäärä: 30.06.2022
Tiivistelmä
More and more space applications and missions are considering the use of components processed with deep submicron technologies (< 65 nm feature size): ASIC, flash memories, DDR3 memories, FPGA, SoC. These technologies are scaled to the point that low energy protons (LEP) can cause Single Event Upset (SEU) through direct ionization. The large SEU cross section observed from LEPs (protons of energy < 5 MeV) raised concerns that this new mechanism might significantly increase on-orbit error rates. These concerns led to several studies that investigated how much LEPs contribute to the total error rate. Up to now all studies show that LEP contribution to on orbit rates, are much smaller than some have feared. However, the estimation varies from one study to the other because different methods are used to predict the LEP error rate [RD1-3]. To date, there is no accepted standard method to characterize proton SEE sensitivity by direct ionization, and then estimate the SEE rate in orbit.
